Note: Springer Nature eBook Contents: Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools - Simulation analysis of 2D MOSFET - Simulation analysis of 3D FinFET with LG = 15 nm - Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm - Simulation analysis of GAA NWFET - Simulation analysis of Junctionless FET with LG = 10 nm - Simulation analysis of Tunnel FET - Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm. (Author) (role) Corporate author: SpringerLink (Online service) Edition: 1st ed. : Title: 3D TCAD Simulation for CMOS Nanoeletronic Devices / by Yung-Chun Wu, Yi-Ruei Jhan.
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